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|Title:||Integrated Strategy toward Self-Powering and Selectivity Tuning of Semiconductor Gas Sensors|
Hoffmann, Martin W. G.
Casals Guillén, Olga
Hernández Ramírez, Francisco
Mohajerani, M. S.
Prades García, Juan Daniel
|Keywords:||Detectors de gasos|
|Publisher:||American Chemical Society|
|Abstract:||Inorganic conductometric gas sensors struggle to overcome limitations in high power consumption and poor selectivi-ty. Herein, recent advances in developing self-powered gas sensors with tunable selectivity are introduced. Alternative general approaches for powering gas sensors were realized via proper integration of complementary functionalities (namely; powering and sensing) in a singular heterostructure. These solar light driven gas sensors operating at room temperature without applying any additional external powering sources are comparatively discussed. The TYPE-1 gas sensor based on integration of pure inorganic interfaces (e.g. CdS/n-ZnO/p-Si) is capable of delivering a self-sustained sensing response, while it shows a non-selective interaction towards oxidizing and reducing gases. The structural and the optical merits of TYPE-1 sensor are investigated giving more insights into the role of light activation on the modu-lation of the self-powered sensing response. In the TYPE-2 sensor, the selectivity of inorganic materials is tailored through surface functionalization with self-assembled organic monolayers (SAMs). Such hybrid interfaces (e.g. SAMs/ZnO/p-Si) have specific surface interactions with target gases compared to the non-specific oxidation-reduction interactions governing the sensing mechanism of simple inorganic sensors. The theoretical modeling using density functional theory (DFT) has been used to simulate the sensing behavior of inorganic/organic/gas interfaces, revealing that the alignment of organic/gas frontier molecular orbitals with respect to the inorganic Fermi level is the key factor for tuning selectivity. These platforms open new avenues for developing advanced energy-neutral gas sensing devices and concepts.|
|Note:||Versió postprint del document publicat a: http://dx.doi.org/10.1021/acssensors.6b00508|
|It is part of:||ACS Sensors, 2016, vol.1, num.10, p. 1256–1264|
|Appears in Collections:||Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))|
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Articles publicats en revistes (Electrònica)
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