Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/103227
Title: Energetics and carrier transport in doped Si/SiO2 quantum dots
Author: Garcia-Castello, Nuria
Illera Robles, Sergio
Prades García, Juan Daniel
Ossicini, Stefano
Cirera Hernández, Albert
Guerra, Roberto
Keywords: Transport d'electrons
Semiconductors
Electrònica quàntica
Nanoelectrònica
Electron transport
Semiconductors
Quantum electronics
Nanoelectronics
Issue Date: 15-Jun-2015
Publisher: Royal Society of Chemistry
Abstract: In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.
Note: Versió postprint del document publicat a: https://doi.org/10.1039/C5NR02616D
It is part of: Nanoscale, 2015, vol. 7, num. 29, p. 12564-12571
Related resource: https://doi.org/10.1039/C5NR02616D
URI: http://hdl.handle.net/2445/103227
ISSN: 2040-3364
Appears in Collections:Articles publicats en revistes (Electrònica)

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