Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10466
Title: Systematics of properties of the electron gas in deep-etched quantum wires
Author: Martorell Domenech, Juan
Sprung, Donald W. L.
Keywords: Superfícies (Física)
Semiconductors
Propietats elèctriques
Surfaces (Physics)
Semiconductors
Electric properties
Issue Date: 1996
Publisher: The American Physical Society
Abstract: An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.54.11386
It is part of: Physical Review B, 1996, vol. 54, núm. 11, p. 11386-11396
URI: http://hdl.handle.net/2445/10466
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física Quàntica i Astrofísica)

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