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http://hdl.handle.net/2445/10599
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DC Field | Value | Language |
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dc.contributor.author | Pellegrino, Paolo | cat |
dc.contributor.author | Leveque, P. | cat |
dc.contributor.author | Hallen, A. | cat |
dc.contributor.author | Lalita, J. | cat |
dc.contributor.author | Jagadish, C. (Chennupati) | cat |
dc.contributor.author | Svensson, Bengt G. | cat |
dc.date.accessioned | 2009-12-28T11:21:30Z | - |
dc.date.available | 2009-12-28T11:21:30Z | - |
dc.date.issued | 2001 | cat |
dc.identifier.issn | 0163-1829 | cat |
dc.identifier.uri | http://hdl.handle.net/2445/10599 | - |
dc.description.abstract | Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 23108 cm22 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics of the prominent divacancy (V2) and vacancy-oxygen ~VO! centers were studied in detail using deep-level transient spectroscopy. The decrease of V2 centers exhibits first-order kinetics in both Czochralski-grown ~CZ! and float-zone ~FZ! samples, and the data provide strong evidence for a process involving migration of V2 and subsequent annihilation at trapping centers. The migration energy extracted for V2 is ;1.3 eV and from the shape of the concentration versus depth profiles, an effective diffusion length <0.1 mm is obtained. The VO center displays a more complex annealing behavior where interaction with mobile hydrogen ~H! plays a key role through the formation of VOH and VOH2 centers. Another contribution is migration of VO and trapping by interstitial oxygen atoms in the silicon lattice, giving rise to vacancy-dioxygen pairs. An activation energy of ;1.8 eV is deduced for the migration of VO, in close resemblance with results from previous studies using electron-irradiated samples. A model for the annealing of VO, involving only three reactions, is put forward and shown to yield a close quantitative agreement with the experimental data for both CZ and FZ samples over the whole temperature range studied. | - |
dc.format.extent | 10 p. | cat |
dc.format.mimetype | application/pdf | eng |
dc.language.iso | eng | eng |
dc.publisher | The American Physical Society | eng |
dc.relation.isformatof | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.64.195211 | cat |
dc.relation.ispartof | Physical Review B, 2001, vol. 64, núm. 19, p. 195211-195221 | eng |
dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.64.195211 | - |
dc.rights | (c) The American Physical Society, 2001 | eng |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Microelectrònica | cat |
dc.subject.classification | Dispositius magnètics | cat |
dc.subject.other | Microelectronics | eng |
dc.subject.other | Magnetic devices | eng |
dc.title | Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon | eng |
dc.type | info:eu-repo/semantics/article | eng |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 521835 | cat |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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521835.pdf | 153.93 kB | Adobe PDF | View/Open |
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