Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10647
Title: Giant step bunching from self-organized coalescence of SrRuO3 islands
Author: Sánchez Barrera, Florencio
Herranz Casabona, Gervasi
Fontcuberta i Griñó, Josep
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Keywords: Ciència dels materials
Pel·lícules fines
Semiconductors
Materials science
Thin films
Semiconductors
Issue Date: 2006
Publisher: The American Physical Society
Abstract: Step bunching develops in the epitaxy of SrRuO3 on vicinal SrTiO3(001) substrates. We have investigated the formation mechanisms and we show here that step bunching forms by lateral coalescence of wedgelike three-dimensional islands that are nucleated at substrate steps. After coalescence, wedgelike islands become wider and straighter with growth, forming a self-organized network of parallel step bunches with altitudes exceeding 30 unit cells, separated by atomically flat terraces. The formation mechanism of step bunching in SrRuO3, from nucleated islands, radically differs from one-dimensional models used to describe bunching in semiconducting materials. These results illustrate that growth phenomena of complex oxides can be dramatically different to those in semiconducting or metallic systems.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.73.073401
It is part of: Physical Review B, 2006, vol. 73 núm. 7, p. 073401-1-073401-4
URI: http://hdl.handle.net/2445/10647
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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