Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10826
Title: Electronic structure and screening dynamics of ethene on single domain Si(001) from resonant inelastic X-ray scattering.
Author: Fhlisch, A.
Hennies, F.
Wurth, W.
Witkowski, N.
Nagasono, M.
Piancastelli, M. N.
Moskaleva, L. V.
Neyman, Konstantin M.
Rösch, Notker
Keywords: Superfícies (Física)
Estructura electrònica
Propietats òptiques
Electronic structure
Optical properties
Superfícies (Física)
Issue Date: 2004
Publisher: The American Physical Society
Abstract: We present a resonant inelastic x-ray scattering ~RIXS! study of a strongly bound adsorbate on a semiconductor surface, C2H4 /Si(001). The valence electronic structure as well as the photon energy dependence in RIXS can be studied without the dominating effect of dynamic metallic screening. We demonstrate that for this strongly coupled system the RIXS spectrum resulting from a selective excitation into the unoccupied s CSi * resonance can be interpreted with the help of density-functional calculations. In addition, we show how excitation into different resonances leads to a significant photon energy dependence of the RIXS spectral features, not seen in strongly coupled adsorbate systems on metals.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.69.153408
It is part of: Physical Review B, 2004, vol. 69, núm. 15, p. 153408-1-153408-4
Related resource: http://dx.doi.org/10.1103/PhysRevB.69.153408
URI: http://hdl.handle.net/2445/10826
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Ciència dels Materials i Química Física)

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