Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/10914
Title: Chaos in resonant-tunneling superlattices
Author: Bulashenko, Oleg
Bonilla, L. L. (Luis López), 1956-
Keywords: Semiconductors
Dinàmica de fluids
Efecte túnel
Semiconductors
Fluid dynamics
Tunneling (Physics)
Issue Date: 1995
Publisher: The American Physical Society
Abstract: Spatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.
Note: Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.52.7849
It is part of: Physical Review B, 1995, vol. 52, núm. 11, p. 7849-7852
URI: http://hdl.handle.net/2445/10914
ISSN: 0163-1829
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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