Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/124533
Title: Structural characterization of GaN nanowires using TEM
Author: Pozo Bueno, Daniel del
Director/Tutor: Martín, Gemma
Peiró Martínez, Francisca
Keywords: Nitrur de gal·li
Microscòpia electrònica de transmissió
Treballs de fi de grau
Gallium nitride
Transmission electron microscopy
Bachelor's thesis
Issue Date: Jan-2018
Abstract: In the present study, gallium nitride (GaN) nanowires fabricated by top-down etching are investigated by transmission electron microscopy (TEM). The study starts with the lamella preparation using the lift-out technique in a focused ion beam (FIB) instrument. Subsequently, different observation modes of the TEM are applied to asses the quality of the growth and identify the crystal structure. Selected area diffraction mode (SAD) is used to obtain the diffraction patterns, which are appropriate to identify the crystal structure. Then, two-beam conditions are carried out to find the crystallographic defects and, Finally, through the high resolution mode, the phase contrast images are used to achieve atomic resolution.
Note: Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutores: Gemma Martín, Francesca Peiro
URI: http://hdl.handle.net/2445/124533
Appears in Collections:Treballs Finals de Grau (TFG) - Física

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