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dc.contributor.authorColl Benejam, Catalina-
dc.contributor.authorLópez Conesa, Lluís-
dc.contributor.authorRebled, J. M. (José Manuel)-
dc.contributor.authorMagén, César-
dc.contributor.authorSánchez Barrera, Florencio-
dc.contributor.authorFontcuberta i Griñó, Josep-
dc.contributor.authorEstradé Albiol, Sònia-
dc.contributor.authorPeiró Martínez, Francisca-
dc.description.abstractLaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). Based on scanning transmission electron microscope - high-angle annular darkfield imaging (STEM-HAADF) contrast analysis and image simulations, Ruddlesden-Popper faulted configurations, with 1/2a<111> relative displacement of defect free perovskite blocks, are atomically modeled and simulated to disentangle the variation of Z-contrast in the experimental images-
dc.format.extent5 p.-
dc.publisherAmerican Chemical Society-
dc.relation.isformatofVersió postprint del document publicat a:
dc.relation.ispartofJournal of Physical Chemistry C, 2017, vol. 121, num. 17, p. 9300-9304-
dc.rights(c) American Chemical Society , 2017-
dc.subject.classificationPel·lícules fines-
dc.subject.otherThin films-
dc.titleSimulation of STEM-HAADF image contrast of Ruddlesden-Popper faulted LaNiO<sub>3</sub> thin films-
Appears in Collections:Articles publicats en revistes (Centres Científics i Tecnològics de la Universitat de Barcelona (CCiTUB))
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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