Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/126208
Title: Effect of rare earth on ZnO-based memristors
Author: Bonet Isidro, Ferran
Director/Tutor: Hernández Márquez, Sergi
Blázquez, O. (Oriol)
Keywords: Nanoelectrònica
Circuits electrònics
Teoria de la commutació
Treballs de fi de màster
Nanoelectronics
Electronic circuits
Switching theory
Master's thesis
Issue Date: Jul-2018
Abstract: Memristors are electronic devices that present resistive switching. Their main application is the fabrication of digital memories. In this work Tb doped-ZnO based memristors are characterized and their properties are compared to the ones of undoped ZnO devices. The study shows that it is possible to obtain switching in doped ZnO-based devices at lower currents. Devices doped with rare earth ions also exhibit light emission, while preserving their resistive switching properties. This was not observed in the undoped devices and is an important advantage for developing optically read digital memories. Finally, the electrical conduction mechanisms present in the memristors are also analyzed
Note: Màster en Nanociència i Nanotecnologia, Facultat de Física, Universitat de Barcelona, Curs: 2017-2018. Tutors: Sergi Hernández , Oriol Blázquez
URI: http://hdl.handle.net/2445/126208
Appears in Collections:Màster Oficial - Nanociència i Nanotecnologia

Files in This Item:
File Description SizeFormat 
Bonet-Isidro-Ferran.pdf2.88 MBAdobe PDFView/Open


This item is licensed under a Creative Commons License Creative Commons