Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/128476
Title: The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layer
Author: López-Marino, Simon
Espindola Rodriguez, Moises
Sánchez González, YudaniaSánchez, Y.
Alcobé i Ollé, Xavier
Oliva Cuyàs, Francesc
Xie, Haibing
Neuschitzer, Markus
Giraldo Muñoz, Sergio
Placidi, Marcel
Caballero, R.
Izquierdo Roca, Victor
Pérez Rodríguez, Alejandro
Saucedo, Edgardo
Keywords: Cèl·lules solars
Pel·lícules fines
Fotoelectricitat
Espectroscòpia Raman
Solar cells
Thin films
Photoelectricity
Raman spectroscopy
Issue Date: 23-Jun-2016
Publisher: Elsevier
Abstract: Cu2ZnSn(SxSe1−x)4 (CZTSSe) photovoltaic absorbers could be the earth-abundant and low toxicity replacement for the already commercialized CuIn1−xGaxSe2 (CIGS) thin film technology. In order to make this possible, specific research efforts applied to the bulk, front and back interfaces must be performed with the aim of improving CZTSSe performance. In this paper the importance of back contact modification to obtain high efficiency Cu2ZnSnSe4 (CZTSe) solar cells and to increase a paramount and limiting parameter such as VOC is highlighted. Several Mo configurations (monolayer, bi-layer and tri-layer) with different electrical and morphological properties are investigated in CZTSe solar cells. An optimum tri-layer configuration in order to minimize overselenization of the back contact during thermal annealing while keeping reasonable electrical features is defined. Additionally, a thin intermediate MoO2 layer that results in a very effective barrier against selenization and innovative way to efficiently assist in the CZTSe absorber sintering is introduced. The use of this layer enhances grain growth and subsequently the efficiency of solar cells increases via major VOC and FF improvement. An efficiency increase from 7.2% to 9.5% is obtained using a Mo tri-layer with a 20nm intermediate MoO2 layer.
Note: Versió postprint del document publicat a: https://doi.org/10.1016/j.nanoen.2016.06.034
It is part of: Nano Energy, 2016, vol. 26, p. 708-721
URI: http://hdl.handle.net/2445/128476
Related resource: https://doi.org/10.1016/j.nanoen.2016.06.034
ISSN: 2211-2855
Appears in Collections:Articles publicats en revistes (Electrònica)

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