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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/13171
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dc.contributor.authorLaukhin, Vladimircat
dc.contributor.authorSkumryev, Vassil Hristovcat
dc.contributor.authorMartí, X.cat
dc.contributor.authorHrabovsky, D.cat
dc.contributor.authorSánchez Barrera, Florenciocat
dc.contributor.authorGarcía-Cuenca Varona, María Victoriacat
dc.contributor.authorFerrater Martorell, Cèsarcat
dc.contributor.authorVarela Fernández, Manuel, 1956-cat
dc.contributor.authorLüders, R.cat
dc.contributor.authorBobo, J. F.cat
dc.contributor.authorFontcuberta i Griñó, Josepcat
dc.date.accessioned2010-06-25T08:28:29Z-
dc.date.available2010-06-25T08:28:29Z-
dc.date.issued2006-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/2445/13171-
dc.description.abstractThe magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.eng
dc.format.extent4 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Physical Societycat
dc.relation.isformatofReproducció digital del document proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevLett.97.227201cat
dc.relation.ispartofPhysical Review Letters, 2006, vol. 97, núm. 22, p. 227201-1-227201-4cat
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevLett.97.227201-
dc.rights(c) American Physical Society, 2006cat
dc.sourceArticles publicats en revistes (Física Aplicada)-
dc.subject.classificationElectrònica quànticacat
dc.subject.classificationSemiconductorscat
dc.subject.classificationMicroelectrònicacat
dc.subject.otherQunatum electronicseng
dc.subject.otherSemiconductorseng
dc.subject.otherMicroelectronicseng
dc.titleElectric-field control of exchange bias in multiferroic epitaxial heterostructureseng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec549576eng
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
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