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http://hdl.handle.net/2445/140020
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DC Field | Value | Language |
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dc.contributor.advisor | López Vidrier, Julià | - |
dc.contributor.advisor | Hernández Márquez, Sergi | - |
dc.contributor.author | Blasco Ladrero, Pablo | - |
dc.date.accessioned | 2019-09-13T15:25:58Z | - |
dc.date.available | 2019-09-13T15:25:58Z | - |
dc.date.issued | 2019-01 | - |
dc.identifier.uri | http://hdl.handle.net/2445/140020 | - |
dc.description | Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2019, Tutors: Julià López Vidrier, Sergi Hernández Márquez | ca |
dc.description.abstract | The effect of the variation of the distance between size-controlled silicon nanocrystals (Si NCs) on their electrical properties and low-temperature photoluminescence (PL) emission are studied in the present project. Via the superlattice approach, SiO2 barrier thicknesses from 1 nm to 3 nm, with 0.5 nm steps, alternated with layers of silicon-rich oxynitride (SRON), were deposited on a p-type Si substrate through plasma-enhanced chemical-vapor deposition. After an adequate annealing process, the precipitation of Si NCs was achieved. The low-temperature PL data were depositted using a physical model which takes into account the electron-phonon interaction between NCs, from which the average phonon energy was estimated. The obtained results demonstrate that thicker barriers (i.e., higher inter-NC distance) present lower average phonon energy, which is ascribed to a weaker NC-NC interaction and a greater carrier confinement. In addition, the I(V ) from NCs-containing device were studied. High applied electric fields resulted in Fowler-Nordheim (F-N) mechanism dominating charge transport, from which the values of the band offset energy between the electrode and the NCs-containing dielectric were figured out, being this value larger for thicker barriers, in agreement with a lower injection efficiency. | ca |
dc.format.extent | 5 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | ca |
dc.rights | cc-by-nc-nd (c) Blasco, 2019 | - |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.source | Treballs Finals de Grau (TFG) - Física | - |
dc.subject.classification | Nanocristalls | cat |
dc.subject.classification | Luminescència | cat |
dc.subject.classification | Propietats elèctriques | cat |
dc.subject.classification | Treballs de fi de grau | - |
dc.subject.other | Nanocrystals | eng |
dc.subject.other | Luminescence | eng |
dc.subject.other | Electric properties | eng |
dc.subject.other | Bachelor's theses | - |
dc.title | Effects of inter-nanocrystal distance on the photoluminescence and electrical properties of silicon nanocrystals | eng |
dc.type | info:eu-repo/semantics/bachelorThesis | ca |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | ca |
Appears in Collections: | Treballs Finals de Grau (TFG) - Física |
Files in This Item:
File | Description | Size | Format | |
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BLASCO LADRERO Pablo.pdf | 3.13 MB | Adobe PDF | View/Open |
This item is licensed under a Creative Commons License