Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/143837
Full metadata record
DC FieldValueLanguage
dc.contributor.authorFrieiro Castro, Juan Luis-
dc.contributor.authorLópez-Vidrier, J.-
dc.contributor.authorBlázquez, O. (Oriol)-
dc.contributor.authorYazicioglu, D.-
dc.contributor.authorGutsch, S.-
dc.contributor.authorValenta, Jan-
dc.contributor.authorHernández Márquez, Sergi-
dc.contributor.authorZacharias, Margit-
dc.contributor.authorGarrido Fernández, Blas-
dc.date.accessioned2019-11-04T18:18:27Z-
dc.date.available2019-11-04T18:18:27Z-
dc.date.issued2019-10-08-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/143837-
dc.description.abstractIn the last few years, the emergence of studies concerning the resistive switching (RS) phenomenon has resulted in the finding of a large amount of materials being capable of acting as an active layer in such devices, i.e., the layer where the change in resistance takes place. Whereas the normal operation consists of the electrical readout of the modified resistance state of the device after electrical writing, electro-photonic approaches seek the involvement of light in these devices, be it either for the active Set or Reset operations or the readout. We propose in this work silicon nanocrystal multilayers (Si NC MLs) as an active material for being used in RS devices, taking advantage of their outstanding optical properties. The resistance states of Si NC MLs were obtained by electrical excitation, whose readout is carried out by electrical and electro-optical means, thanks to a distinguishable electroluminescence emission under each state. To achieve this, we report on an adequate design that combines both the Si NC MLs with ZnO as a transparent conductive oxide, whose material properties ensure the device RS performance while allowing the electro-optical characterization. Overall, such an occurrence states the demonstration of a Si NCs-based electroluminescent RS device, which paves the way for their future integration into photonic integrated circuits.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: https://doi.org/10.1063/1.5119299-
dc.relation.ispartofJournal of Applied Physics, 2019, vol. 126, p. 144501-
dc.relation.urihttps://doi.org/10.1063/1.5119299-
dc.rights(c) American Institute of Physics , 2019-
dc.subject.classificationNanocristalls-
dc.subject.classificationSilici-
dc.subject.classificationDíodes electroluminescents-
dc.subject.otherNanocrystals-
dc.subject.otherSilicon-
dc.subject.otherLight emitting diodes-
dc.titleSilicon nanocrystals-based electroluminescent resistive switching device-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec692143-
dc.date.updated2019-11-04T18:18:27Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
692143.pdf2.83 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.