Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/15726
Title: Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
Author: Jambois, Olivier
Gourbilleau, F.
Kenyon, Anthony J.
Montserrat i Martí, Josep
Rizk, Richard
Garrido Fernández, Blas
Keywords: Terres rares
Semiconductors
Propietats òptiques
Amplificadors (Electrònica)
Semiconductors
Optical properties
Amplifiers (Electronics)
Issue Date: 20-Jan-2010
Publisher: Optical Society of America
Abstract: This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10¿2 %. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1364/OE.18.002230
It is part of: Optics Express, 2010, vol. 18, núm 3, pp. 2230-2235
Related resource: http://dx.doi.org/10.1364/OE.18.002230
URI: http://hdl.handle.net/2445/15726
ISSN: 1094-4087
Appears in Collections:Publicacions de projectes de recerca finançats per la UE
Articles publicats en revistes (Electrònica)

Files in This Item:
File Description SizeFormat 
585172.pdf487.5 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.