Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/164375
Title: The lowest doublet and quartet potential energy surfaces involved in the N(4S) + O2 reaction. I. Ab initio calculations for the Cs-symmetry (2A', 4A') abstraction and insertion reaction mechanisms
Author: Sayós Ortega, Ramón
Oliva, Carolina
González Pérez, Miguel
Keywords: Teoria del funcional de densitat
Teoria quàntica
Density functionals
Quantum theory
Issue Date: 10-Jul-2001
Publisher: American Institute of Physics
Abstract: In this work we have carried out ab initio complete active space self-consistent field (CASSCF) calculations, second-order perturbation calculations based on CASSCF wave functions (CASPT2), uncontracted multireference configuration interaction calculations (MR-CI) and some density functional calculations with standard correlation-consistent Dunning basis sets and atomic natural orbital basis sets on the lowest 2A' and 4A' potential energy surfaces involved in the title reaction. The ground 2A' surface has an average energy barrier of 5.3 kcal/mol in the CASPT2 complete basis set limit. A peroxy NOO minimum is found in agreement with preceding ab initio works, which seems to play an important role in the opening of a double microscopic mechanism: direct Cs-abstraction and indirect Cs-insertion through the NO2(X2A1) molecule. The ground 4A' surface shows an average energy barrier of 13.5 kcal/mol in the CASPT2 complete basis set limit. Despite this excited surface displays another peroxy minimum, in this case only a direct Cs-abstraction mechanism can be expected. The present results improve previous high quality ab initio studies and provide lower energy barriers in both potential energy surfaces, which would produce larger total thermal rate constants in better agreement with experimental data. Finally, it is demonstrated that the N and O 2s electron correlation can not be neglected as it produces a significant decrease in both energy barriers.
Note: Reproducció del document publicat a: https://doi.org/10.1063/1.1381012
It is part of: Journal of Chemical Physics, 2001, vol. 115, p. 1287-1297
URI: http://hdl.handle.net/2445/164375
Related resource: https://doi.org/10.1063/1.1381012
ISSN: 0021-9606
Appears in Collections:Articles publicats en revistes (Ciència dels Materials i Química Física)

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