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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/174711
Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation
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Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independentlyfrom the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscopeallows for local implantation and patterning down to the nanometer resolution, which is of interest for deviceapplications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally byhelium implantation. Our combined Raman, x-ray diffraction, and transmission electron microscopy (TEM)study shows that the implantation causes an elongation of the BiFeO3unit cell and ultimately a transition towardsthe so-called supertetragonal polymorph via states with mixed phases. In addition, TEM reveals the onset ofamorphization at a threshold dose that does not seem to impede the overall increase in tetragonality. The phasetransition from the R-like to T-like BiFeO3appears as first-order in character, with regions of phase coexistenceand abrupt changes in lattice parameters.
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TOULOUSE, Constance, FISCHER, J., FAROKHIPOOR, S., YEDRA CARDONA, Lluís, CARLÁ, Francesco, JARNAC, A., ELKAIM, E., FERTEY, P., AUDINOT, J.-n., WIRTZ, Tom, NOHEDA, B., GARCIA, V., FUSIL, S., PERAL ALONSO, I., GUENNOU, M., KREISEL, J.. Patterning enhanced tetragonality in BiFeO3 thin films with effective negative pressure by helium implantation. _Physical Review Materials_. 2021. Vol. 5, núm. 2, pàgs. 024404. [consulta: 25 de novembre de 2025]. ISSN: 2475-9953. [Disponible a: https://hdl.handle.net/2445/174711]