Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/17583
Title: Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals
Author: Carreras, Josep
Bonafos, Caroline
Montserrat i Martí, Josep
Domínguez, Carlos (Domínguez Horna)
Albiol i Cobos, Jordi
Garrido Fernández, Blas
Keywords: Electrònica
Matèria condensada
Nanocristalls semiconductors
Electronics
Condensed matter
Semiconductor nanocrystals
Issue Date: 2008
Publisher: IOP Publishing Ltd.
Abstract: We describe high-speed control of light from silicon nanocrystals under electrical excitation. The nanocrystals are fabricated by the ion implantation of Si+ in the 15?nm thick gate oxide of a field effect transistor at 6.5?keV. A characteristic read-peaked electroluminescence is obtained either by DC or AC gate excitation. However, AC gate excitation is found to have a frequency response that is limited by the radiative lifetimes of silicon nanocrystals, which makes impossible the direct modulation of light beyond 100?kb?s?1 rates. As a solution, we demonstrate that combined DC gate excitation along with an AC channel hot electron injection of electrons into the nanocrystals may be used to obtain a 100% deep modulation at rates of 200?Mb?s?1 and low modulating voltages. This approach may find applications in biological sensing integrated into CMOS, single-photon emitters or direct encoding of information into light from Si-nc doped with erbium systems, which exhibit net optical gain. In this respect, the main advantage compared to conventional electro-optical modulators based on plasma dispersion effects is the low power consumption (104 times smaller) and thus the inherent large scale of integration. A detailed electrical characterization is also given. An Si/SiO2 barrier change from ?b = 3.2 to 4.2?eV is found while the injection mechanism is changed from Fowler?Nordheim to channel hot electron, which is a clear signature of nanocrystal charging and subsequent electroluminescence quenching.
Note: Versió postprint del document publicat a http://dx.doi.org/10.1088/0957-4484/19/20/205201
It is part of: Nanotechnology, 2008, vol. 19, núm. 20, p. 205201-1-205201-9
Related resource: http://dx.doi.org/10.1088/0957-4484/19/20/205201
URI: http://hdl.handle.net/2445/17583
ISSN: 0957-4484
Appears in Collections:Articles publicats en revistes (Electrònica)
Publicacions de projectes de recerca finançats per la UE

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