Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/176439
Title: Physical characterization of ZnO precursors
Author: Cruz Romero, Xavier de la
Director/Tutor: Vilà i Arbonès, Anna Maria
Keywords: Pel·lícules fines
Òxid de zinc
Treballs de fi de grau
Thin films
Zinc oxide
Bachelor's thesis
Issue Date: Jan-2020
Abstract: Zinc oxide (ZnO) is an important semiconductor material with multiple applications in piezo-electric transducers, spin functional devices and gas sensors, for instance. In this article, we study optical and structural properties of ZnO thin films obtained from 4 precursors deposited by sol-gel on glass substrates and heated to 4 different temperatures each one. The absorption coefficient and energy band gap were determined from UV-visible absorption spectrum (200 – 1100 nm). The luminescence properties were evaluated from photoluminescence spectrum (350 – 850 nm). The amount of impurities in the final material were obtained from elemental analysis. The energy band gap was found to vary between 3.00 – 3.25 eV, depending on the precursor and the annealing temperature. We discuss and relate the different processes with the impurities and structure of the samples. SEM images of the thin films were added to complete the study
Note: Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2020, Tutora: Anna Maria Vilà Arbonès
URI: http://hdl.handle.net/2445/176439
Appears in Collections:Treballs Finals de Grau (TFG) - Física

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