Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/22086
Title: 40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron¿oxide interface layers
Author: Zhang, Zongzhi
Cardoso, Susana
Freitas, P. P.
Batlle Gelabert, Xavier
Wei, Peng
Barradas, N.
Soares, J. C.
Keywords: Propietats magnètiques
Circuits de transistors
Electrònica de l'estat sòlid
Transistor circuits
Solid state electronics
Issue Date: 2001
Publisher: American Institute of Physics
Note: Reproducció del document publicada a: http://dx.doi.org/10.1063/1.1356712
It is part of: Journal of Applied Physics, 2001, vol. 89, núm. 11, p. 6665-6667
URI: http://hdl.handle.net/2445/22086
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física de la Matèria Condensada)

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