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|Title:||Theory of surface noise under Coulomb correlations between carriers and surface states|
|Author:||Kochelap, V. A. (Viacheslav Aleksandrovich)|
Sokolov, V. N.
Rubí Capaceti, José Miguel
Circuits de transistors
|Publisher:||American Institute of Physics|
|Abstract:||We present a theory of the surface noise in a nonhomogeneous conductive channel adjacent to an insulating layer. The theory is based on the Langevin approach which accounts for the microscopic sources of fluctuations originated from trapping¿detrapping processes at the interface and intrachannel electron scattering. The general formulas for the fluctuations of the electron concentration, electric field as well as the current-noise spectral density have been derived. We show that due to the self-consistent electrostatic interaction, the current noise originating from different regions of the conductive channel appears to be spatially correlated on the length scale correspondent to the Debye screening length in the channel. The expression for the Hooge parameter for 1/f noise, modified by the presence of Coulomb interactions, has been derived|
|Note:||Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1512698|
|It is part of:||Journal of Applied Physics, 2002, vol. 92, núm. 9, p. 5347-5358|
|Appears in Collections:||Articles publicats en revistes (Física de la Matèria Condensada)|
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