Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24682
Title: Characterization of the EL2 center in GaAs by optical admittance spectroscopy
Author: Dueñas Carazo, Salvador
Castán Lanaspa, María Elena
Dios, Agustín de
Bailón Vega, Luis A.
Barbolla Sancho, Juan
Pérez Rodríguez, Alejandro
Keywords: Espectroscòpia
Òptica
Optics
Spectrum analysis
Issue Date: 15-May-1990
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.345149
It is part of: Journal of Applied Physics, 1990, vol. 67, núm. 10, p. 6309-6314
Related resource: http://dx.doi.org/10.1063/1.345149
URI: http://hdl.handle.net/2445/24682
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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