Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24722
Title: Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy
Author: Westwood, David I.
Woolf, D. A.
Vilà i Arbonès, Anna Maria
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Cristal·lografia
Nanotecnologia
Crystallography
Nanotechnology
Issue Date: 1-Jul-1993
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.354827
It is part of: Journal of Applied Physics, 1993, vol. 74, núm. 3, p. 1731-1735
Related resource: http://dx.doi.org/10.1063/1.354827
URI: http://hdl.handle.net/2445/24722
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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