Please use this identifier to cite or link to this item:
|Title:||Influence of mismatch on the defects in relaxed epitaxial InGaAs/GaAs(100) films grown by molecular beam epitaxy|
|Author:||Westwood, David I.|
Woolf, D. A.
Vilà i Arbonès, Anna Maria
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
|Publisher:||American Institute of Physics|
|Abstract:||Thick (∼3 μm) films of InxGa1−xAs grown on GaAs(100) substrates, across the whole composition range, have been examined by transmission electron microscopy and double‐crystal x‐ray diffraction. The results were compared with the observed growth mode of the material determined by in situ reflection high‐energy electron diffraction in the molecular beam epitaxy growth system. The quality of the material degraded noticeably for compositions up to x∼0.5 associated with an increased density of dislocations and stacking faults. In contrast, improvements in quality as x approached 1.0 were correlated with the introduction of an increasingly more regular array of edge dislocations.|
|Note:||Reproducció del document publicat a: http://dx.doi.org/10.1063/1.354827|
|It is part of:||Journal of Applied Physics, 1993, vol. 74, núm. 3, p. 1731-1735|
|Appears in Collections:||Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.