Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24724
Title: Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers
Author: Roura Grabulosa, Pere
Clark, S. A.
Bosch Estrada, José
Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Propietats òptiques
Optical properties
Issue Date: 15-Apr-1995
Publisher: American Institute of Physics
Abstract: Optical absorption spectra and transmission electron microscopy (TEM) observations on InGaAs/InP layers under compressive strain are reported. From the band¿gap energy dispersion, the magnitude of the strain inhomogeneities. Is quantified and its microscopic origin is analyzed in view of the layer microstructure. TEM observations reveal a dislocation network at the layer interface the density of which correlates with ¿¿. It is concluded that local variations of dislocation density are responsible for the inhomogeneous strain field together with another mechanism that dominates when the dislocation density is very low.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.359513
It is part of: Journal of Applied Physics, 1995, vol. 77, núm. 8, p. 4018-4020
Related resource: http://dx.doi.org/10.1063/1.359513
URI: http://hdl.handle.net/2445/24724
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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