Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24726
Title: Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
Author: Serre, Christophe
Pérez Rodríguez, Alejandro
Romano Rodríguez, Alberto
Morante i Lleonart, Joan Ramon
Kögler, Reinhard
Skorupa, Wolfgang
Keywords: Cristal·lografia
Espectroscòpia
Crystallography
Spectrum analysis
Issue Date: 1-Apr-1995
Publisher: American Institute of Physics
Abstract: High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500°C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline ßSiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.358714
It is part of: Journal of Applied Physics, 1995, vol. 77, núm. 7, p. 2978-2984
Related resource: http://dx.doi.org/10.1063/1.358714
URI: http://hdl.handle.net/2445/24726
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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