Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24742
Title: Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
Author: Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Microscòpia electrònica
Semiconductors
Electron microscopy
Semiconductors
Issue Date: 15-May-1995
Publisher: American Institute of Physics
Abstract: The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.359308
It is part of: Journal of Applied Physics, 1995, vol. 77, núm. 10, p. 4993-4996
Related resource: http://dx.doi.org/10.1063/1.359308
URI: http://hdl.handle.net/2445/24742
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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