Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24742
Title: Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
Author: Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Keywords: Microscòpia electrònica
Semiconductors
Electron microscopy
Semiconductors
Issue Date: 15-May-1995
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.359308
It is part of: Journal of Applied Physics, 1995, vol. 77, núm. 10, p. 4993-4996
Related resource: http://dx.doi.org/10.1063/1.359308
URI: http://hdl.handle.net/2445/24742
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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