Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/24742
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Peiró Martínez, Francisca | cat |
dc.contributor.author | Cornet i Calveras, Albert | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.date.accessioned | 2012-05-02T11:00:23Z | - |
dc.date.available | 2012-05-02T11:00:23Z | - |
dc.date.issued | 1995-05-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24742 | - |
dc.description.abstract | The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed. | - |
dc.format.extent | 4 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.359308 | - |
dc.relation.ispartof | Journal of Applied Physics, 1995, vol. 77, núm. 10, p. 4993-4996 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.359308 | - |
dc.rights | (c) American Institute of Physics, 1995 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Microscòpia electrònica | cat |
dc.subject.classification | Semiconductors | cat |
dc.subject.other | Electron microscopy | eng |
dc.subject.other | Semiconductors | eng |
dc.title | Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 93635 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.