Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24743
Title: Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy
Author: Pérez Murano, Francesc
Abadal, G.
Barniol i Beumala, Núria
Aymerich Humet, Xavier
Servat, J.
Gorostiza Langa, Pablo Ignacio
Sanz Carrasco, Fausto
Keywords: Microscòpia de força atòmica
Silici
Nanoelectrònica
Detectors
camps elèctrics
Atomic force microscopy
Silicon
Nanoelectronics
Detectors
Electric fields
Issue Date: 1-Dec-1995
Publisher: American Institute of Physics
Abstract: The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360505
It is part of: Journal of Applied Physics, 1995, vol. 78, núm. 11, p. 6797-6802
Related resource: http://dx.doi.org/10.1063/1.360505
URI: http://hdl.handle.net/2445/24743
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Ciència dels Materials i Química Física)

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