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http://hdl.handle.net/2445/24762
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DC Field | Value | Language |
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dc.contributor.author | Moreno, J. A. | cat |
dc.contributor.author | Garrido Fernández, Blas | cat |
dc.contributor.author | Samitier i Martí, Josep | cat |
dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
dc.date.accessioned | 2012-05-02T12:33:02Z | - |
dc.date.available | 2012-05-02T12:33:02Z | - |
dc.date.issued | 1997-02-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/24762 | - |
dc.description.abstract | The peak frequency, width, and shape of the transverse-optical (TO) and longitudinal-optical (LO) infrared absorption modes of silicon oxides (SiO2, SiOx), silicon nitrides (Si3N4, SiNx), silicon oxynitrides (SiOxNy), and other silicon compounds have often been connected with stress, stoichiometry, defects, structural order, and other properties of the layers. However, certain geometrical effects strongly influence the spectral response of the material independent of its physical or structural properties. The influence of layer thickness, multilayer configuration, substrate effects, angles, and polarization on the behavior of TO and LO bands are presented and discussed. Some corrections are suggested to reduce experimental error and for the reliable measurement of stress, composition, disorder, and structure. | - |
dc.format.extent | 10 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.364049 | - |
dc.relation.ispartof | Journal of Applied Physics, 1997, vol. 81, núm. 4, p. 1933-1942 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.364049 | - |
dc.rights | (c) American Institute of Physics, 1997 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Espectroscòpia | cat |
dc.subject.classification | Compostos de silici | cat |
dc.subject.other | Spectrum analysis | eng |
dc.subject.other | Silicon compounds | eng |
dc.title | Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 109980 | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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109980.pdf | 190.46 kB | Adobe PDF | View/Open |
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