Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24783
Title: Raman scattering of InSb quantum dots grown on InP substrates
Author: Armelles Reig, G.
Utzmeier, Thomas
Postigo Resa, Pablo Aitor
Briones Fernández-Pola, Fernando
Ferrer, J. C.
Peiró Martínez, Francisca
Cornet i Calveras, Albert
Keywords: Electrònica quàntica
Efecte Raman
Quantum electronics
Raman effect
Issue Date: 1-May-1997
Publisher: American Institute of Physics
Abstract: In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365169
It is part of: Journal of Applied Physics, 1997, vol. 81, núm. 9, p. 6339-6342
Related resource: http://dx.doi.org/10.1063/1.365169
URI: http://hdl.handle.net/2445/24783
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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