Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24787
Title: Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells
Author: Asensi López, José Miguel
Merten, Jens
Voz Sánchez, Cristóbal
Andreu i Batallé, Jordi
Keywords: Cèl·lules solars
Cèl·lules fotovoltaiques
Camps elèctrics
Simulació per ordinador
Solar cells
Photovoltaic cells
Electric fields
Computer simulation
Issue Date: 1-Mar-1999
Publisher: American Institute of Physics
Abstract: An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective ¿¿ product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.369634
It is part of: Journal of Applied Physics, 1999, vol. 85, num. 5, p. 2939-2951
Related resource: http://dx.doi.org/10.1063/1.369634
URI: http://hdl.handle.net/2445/24787
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
142792.pdf261.11 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.