Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24791
Title: Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
Author: Beckers, L.
Sánchez Barrera, Florencio
Schubert, J.
Zander, W.
Buchal, Ch.
Keywords: Pel·lícules fines
Làsers
Ions
Superconductivitat
Thin films
Lasers
Ions
Superconductivity
Issue Date: 15-Mar-1996
Publisher: American Institute of Physics
Abstract: Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.361234
It is part of: Journal of Applied Physics, 1996, vol. 79, núm. 6, p. 3337-3339
Related resource: http://dx.doi.org/10.1063/1.361234
URI: http://hdl.handle.net/2445/24791
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

Files in This Item:
File Description SizeFormat 
148288.pdf66.52 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.