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Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24793

Title: Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy
Authors: Viera Mármol, Gregorio
Huet, S.
Bertrán Serra, Enric
Boufendi, L.
Matèria: Pel·lícules fines
Espectroscòpia Raman
Nanoestructures
Microelectrònica
Radiofreqüència
Optoelectrònica
Thin films
Raman spectroscopy
Nanostructures
Microelectronics
Radio frequency
Optoelectronics
Issue Date: 15-Oct-2001
Publisher: American Institute of Physics
Abstract: In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.
Nota: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1398066
És part de: Journal of Applied Physics, 2001, vol. 90, núm. 8, p. 4272-4280
URI: http://hdl.handle.net/2445/24793
DOI: http://dx.doi.org/10.1063/1.1398066
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada i Òptica)

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