Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24797
Title: Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
Author: Diéguez Barrientos, Àngel
Peiró Martínez, Francisca
Cornet i Calveras, Albert
Morante i Lleonart, Joan Ramon
Alsina, F.
Pascual Gainza, Jordi
Keywords: Superfícies (Física)
Interfícies (Ciències físiques)
Pel·lícules fines
Surfaces (Physics)
Interfaces (Physical sciences)
Thin films
Issue Date: 1-Oct-1996
Publisher: American Institute of Physics
Abstract: We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal‐organic vapor‐phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt‐type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363332
It is part of: Journal of Applied Physics, 1996, vol. 80, núm. 7, p. 3798-3803
Related resource: http://dx.doi.org/10.1063/1.363332
URI: http://hdl.handle.net/2445/24797
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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