Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24802
Title: SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions
Author: Herranz Casabona, Gervasi
Martínez Perea, Benjamin
Fontcuberta i Griñó, Josep
Sánchez Barrera, Florencio
García-Cuenca Varona, María Victoria
Ferrater Martorell, Cèsar
Varela Fernández, Manuel, 1956-
Keywords: Histèresi
Magnetisme
Elèctrodes
Hysteresis
Magnetism
Electrodes
Issue Date: 15-May-2003
Publisher: American Institute of Physics
Abstract: We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5¿nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1555372
It is part of: Journal of Applied Physics, 2003, vol. 93, p. 8035-8037
Related resource: http://dx.doi.org/10.1063/1.1555372
URI: http://hdl.handle.net/2445/24802
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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