Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24809
Title: Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes
Author: Gomila Lluch, Gabriel
Bulashenko, Oleg
Keywords: Microelectrònica
Matèria condensada
Microelectronics
Condensed matter
Issue Date: 15-Jul-1999
Publisher: American Institute of Physics
Abstract: An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.370839
It is part of: Journal of Applied Physics, 1999, vol. 86, núm. 2, p. 1004-1012
Related resource: http://dx.doi.org/10.1063/1.370839
URI: http://hdl.handle.net/2445/24809
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)
Articles publicats en revistes (Física de la Matèria Condensada)

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