Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24815
Title: Electrically active point defects in n-type 4H¿SiC
Author: Doyle, J. P.
Linnarsson, M. K.
Pellegrino, Paolo
Keskitalo, N.
Svensson, B. G.
Schoner, A.
Nordell, N.
Lindstrom, J. L.
Keywords: Estructura electrònica
Cristal·lografia
Electronic structure
Crystallography
Issue Date: 1-Aug-1998
Publisher: American Institute of Physics
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.368247
It is part of: Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357
Related resource: http://dx.doi.org/10.1063/1.368247
URI: http://hdl.handle.net/2445/24815
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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