Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24815
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dc.contributor.authorDoyle, J. P.cat
dc.contributor.authorLinnarsson, M. K.cat
dc.contributor.authorPellegrino, Paolocat
dc.contributor.authorKeskitalo, N.cat
dc.contributor.authorSvensson, Bengt G.cat
dc.contributor.authorSchoner, A.cat
dc.contributor.authorNordell, N.cat
dc.contributor.authorLindstrom, J. L.cat
dc.date.accessioned2012-05-03T09:34:13Z-
dc.date.available2012-05-03T09:34:13Z-
dc.date.issued1998-08-01-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/24815-
dc.description.abstractAn electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..-
dc.format.extent4 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.368247-
dc.relation.ispartofJournal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357-
dc.relation.urihttp://dx.doi.org/10.1063/1.368247-
dc.rights(c) American Institute of Physics, 1998-
dc.subject.classificationEstructura electrònicaeng
dc.subject.classificationCristal·lografiacat
dc.subject.otherElectronic structureeng
dc.subject.otherCrystallographyeng
dc.titleElectrically active point defects in n-type 4H¿SiCeng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec521830-
dc.date.updated2012-04-20T11:21:13Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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