Please use this identifier to cite or link to this item:
http://hdl.handle.net/2445/24815
Title: | Electrically active point defects in n-type 4H¿SiC |
Author: | Doyle, J. P. Linnarsson, M. K. Pellegrino, Paolo Keskitalo, N. Svensson, Bengt G. Schoner, A. Nordell, N. Lindstrom, J. L. |
Keywords: | Estructura electrònica Cristal·lografia Electronic structure Crystallography |
Issue Date: | 1-Aug-1998 |
Publisher: | American Institute of Physics |
Abstract: | An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.368247 |
It is part of: | Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357 |
URI: | http://hdl.handle.net/2445/24815 |
Related resource: | http://dx.doi.org/10.1063/1.368247 |
ISSN: | 0021-8979 |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
Files in This Item:
File | Description | Size | Format | |
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521830.pdf | 66.78 kB | Adobe PDF | View/Open |
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