Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24864
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dc.contributor.authorMoreno Pastor, José Antoniocat
dc.contributor.authorGarrido Fernández, Blascat
dc.contributor.authorPellegrino, Paolocat
dc.contributor.authorGarcía Favrot, Cristinacat
dc.contributor.authorArbiol i Cobos, Jordicat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.contributor.authorMarie, P.cat
dc.contributor.authorGourbilleau, Fabricecat
dc.contributor.authorRizk, Richardcat
dc.date.accessioned2012-05-03T11:20:46Z-
dc.date.available2012-05-03T11:20:46Z-
dc.date.issued2005-07-08-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2445/24864-
dc.description.abstracthe complex refractive index of SiO2 layers containing Si nanoclusters (Si-nc) has been measured by spectroscopic ellipsometry in the range from 1.5 to 5.0 eV. It has been correlated with the amount of Si excess accurately measured by x-ray photoelectron spectroscopy and the nanocluster size determined by energy-filtered transmission electron microscopy. The Si-nc embedded in SiO2 have been produced by a fourfold Si+ ion implantation, providing uniform Si excess aimed at a reliable ellipsometric modeling. The complex refractive index of the Si-nc phase has been calculated by the application of the Bruggeman effective-medium approximation to the composite media. The characteristic resonances of the refractive index and extinction coefficient of bulk Si vanish out in Si-nc. In agreement with theoretical simulations, a significant reduction of the refractive index of Si-nc is observed, in comparison with bulk and amorphous silicon. The knowledge of the optical properties of these composite layers is crucial for the realization of Si-based waveguides and light-emitting devices.eng
dc.format.extent4 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoengeng
dc.publisherAmerican Institute of Physics-
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1943512-
dc.relation.ispartofJournal of Applied Physics, 2005, vol. 98, núm. 1, p. 013523-013526-
dc.relation.urihttp://dx.doi.org/10.1063/1.1943512-
dc.rights(c) American Institute of Physics, 1984-
dc.subject.classificationPropietats òptiquescat
dc.subject.classificationMatèria condensadacat
dc.subject.classificationEspectroscòpiacat
dc.subject.classificationCristal·lografiacat
dc.subject.otherOptical propertieseng
dc.subject.otherCondensed mattereng
dc.subject.otherSpectrum analysiseng
dc.subject.otherCrystallographyeng
dc.titleSize dependence of refractive index of Si nanoclusters embedded in SiO2eng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/publishedVersion-
dc.identifier.idgrec527385-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Electrònica)

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