Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24884
Title: White luminescence from Si+ and C+ ion-implanted SiO2 films
Author: Pérez-Rodríguez, A.
González-Varona, O.
Garrido Fernández, Blas
Pellegrino, Paolo
Morante i Lleonart, Joan Ramon
Keywords: Propietats òptiques
Estructura de sòlids i líquids
Optical properties
Structure of solids and liquids
Issue Date: 1-Jul-2003
Publisher: American Institute of Physics
Abstract: The microstructural and optical analysis of SiO2 layers emitting white luminescence is reported. These structures have been synthesized by sequential Si+ and C+ ion implantation and high-temperature annealing. Their white emission results from the presence of up to three bands in the photoluminescence (PL) spectra, covering the whole visible spectral range. The microstructural characterization reveals the presence of a complex multilayer structure: Si nanocrystals are only observed outside the main C-implanted peak region, with a lower density closer to the surface, being also smaller in size. This lack of uniformity in their density has been related to the inhibiting role of C in their growth dynamics. These nanocrystals are responsible for the band appearing in the red region of the PL spectrum. The analysis of the thermal evolution of the red PL band and its behavior after hydrogenation shows that carbon implantation also prevents the formation of well passivated Si/SiO2 interfaces. On the other hand, the PL bands appearing at higher energies show the existence of two different characteristics as a function of the implanted dose. For excess atomic concentrations below or equal to 10%, the spectra show a PL band in the blue region. At higher doses, two bands dominate the green¿blue spectral region. The evolution of these bands with the implanted dose and annealing time suggests that they are related to the formation of carbon-rich precipitates in the implanted region. Moreover, PL versus depth measurements provide a direct correlation of the green band with the carbon-implanted profile. These PL bands have been assigned to two distinct amorphous phases, with a composition close to elemental graphitic carbon or stoichiometric SiC.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.1578172
It is part of: Journal of Applied Physics, 2002, vol. 94, núm. 1, p. 254-262
Related resource: http://dx.doi.org/10.1063/1.1578172
URI: http://hdl.handle.net/2445/24884
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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