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|Title:||Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis|
|Author:||Izquierdo Roca, Victor|
Pérez Rodríguez, Alejandro
Romano Rodríguez, Alberto
Morante i Lleonart, Joan Ramon
Álvarez García, Jacobo
Calvo Barrio, Lorenzo
Grand, P. P.
|Keywords:||Ciència dels materials|
|Publisher:||American Institute of Physics|
|Abstract:||This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.|
|Note:||Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2734103|
|It is part of:||Journal of Applied Physics, 2007, vol. 101, núm. 10, p. 103517-1-103517-8|
|Appears in Collections:||Articles publicats en revistes (Electrònica)|
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