Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24982
Title: Rheotaxial growth of CuInSe2 thin films
Author: Varela Fernández, Manuel, 1956-
Bertrán Serra, Enric
Lousa Rodríguez, Arturo
Esteve Pujol, Joan
Morenza Gil, José Luis
Keywords: Pel·lícules fines
Indi (Metall)
Semiconductors
Cèl·lules fotovoltaiques
Thin films
Indium
Semiconductors
Photovoltaic cells
Issue Date: Mar-1987
Publisher: American Institute of Physics
Abstract: CuInSe2 thin films were deposited onto glass and liquid¿indium¿coated glass substrates by coevaporation of copper, indium, and selenium. The morphology, composition, and crystalline properties have been studied in relation to the deposition process parameters. The deposition rate and the grain size are higher in films grown on liquid indium than on glass and depend on the indium film thickness. Films grown on indium do not show the same crystalline phases of films grown on glass, and in order to obtain films free of spurious phases the Cu fluxes must be increased.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.574097
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1987, vol. 5, p. 169-173
Related resource: http://dx.doi.org/10.1116/1.574097
URI: http://hdl.handle.net/2445/24982
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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