Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/24983
Title: Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition
Author: Andújar Bella, José Luis
Bertrán Serra, Enric
Canillas i Biosca, Adolf
Roch i Cunill, Carles
Morenza Gil, José Luis
Keywords: Radiofreqüència
Pressió
Pel·lícules fines
Semiconductors amorfs
Optoelectrònica
Cèl·lules fotovoltaiques
Radio frequency
Pressure
Thin films
Amorphous semiconductors
Optoelectronics
Fotovoltaic cells
Issue Date: Mar-1987
Publisher: American Institute of Physics
Abstract: The influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon (a-Si:H) thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy. It has been found two pressure regions separated by a threshold value around 20 Pa where the deposition rate increases suddenly. This behavior is more marked as rf power rises and reflects the transition between two rf discharges regimes. The best quality films have been obtained at low pressure and at low rf power but with deposition rates below 0.2 nm/s. In the high pressure region, the enhancement of deposition rate as rf power increases first gives rise to a reduction of film density and an increase of content of hydrogen bonded in polyhydride form because of plasma polymerization reactions. Further rise of rf power leads to a decrease of polyhydride bonding and the material density remains unchanged, thus allowing the growth of a-Si:H films at deposition rates above 1 nm/s without any important detriment of material quality. This overcoming of deposition rate limitation has been ascribed to the beneficial effects of ion bombardment on the a-Si:H growing surface by enhancing the surface mobility of adsorbed reactive species and by eliminating hydrogen bonded in polyhydride configurations.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.577253
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1991, vol. 9, num. 4, p. 2216-2221
Related resource: http://dx.doi.org/10.1116/1.577253
URI: http://hdl.handle.net/2445/24983
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Física Aplicada)

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