Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25044
Title: Modifications in the Si valence band after ion-beam-induced oxidation
Author: Alay, Josep Lluís
Vandervorst, Wilfried
Keywords: Semiconductors
Propietats òptiques
Oxidació
Química de superfícies
Impacte
Semiconductors
Optical properties
Oxidation
Surface chemistry
Impact
Issue Date: Jul-1994
Publisher: American Institute of Physics
Abstract: The changes undergone by the Si surface after oxygen bombardment have special interest for acquiring a good understanding of the Si+-ion emission during secondary ion mass spectrometry (SIMS) analysis. For this reason a detailed investigation on the stoichiometry of the builtup surface oxides has been carried out using in situ x-ray photoemission spectroscopy (XPS). The XPS analysis of the Si 2p core level indicates a strong presence of suboxide chemical states when bombarding at angles of incidence larger than 30°. In this work a special emphasis on the analysis and interpretation of the valence band region was made. Since the surface stoichiometry or degree of oxidation varies with the angle of incidence, the respective valence band structures also differ. A comparison with experimentally measured and theoretically derived Si valence band and SiO2 valence band suggests that the new valence bands are formed by a combination of these two. This arises from the fact that Si¿Si bonds are present on the Si¿suboxide molecules, and therefore the corresponding 3p-3p Si-like subband, which extends towards the Si Fermi level, forms the top of the respective new valence bands. Small variations in intensity and energy position for this subband have drastic implications on the intensity of the Si+-ion emission during sputtering in SIMS measurements. A model combining chemically enhanced emission and resonant tunneling effects is suggested for the variations observed in ion emission during O+2 bombardment for Si targets.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.579187
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 1994, vol. 12, p. 2420-2424
Related resource: http://dx.doi.org/10.1116/1.579187
URI: http://hdl.handle.net/2445/25044
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Electrònica)

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