Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/25055
Title: Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia
Author: Temple Boyer, Pierre
Jalabert, L.
Masarotto, L.
Alay, Josep Lluís
Morante i Lleonart, Joan Ramon
Keywords: Pel·lícules fines
Electroquímica
Nitrurs
Microelectrònica
Thin films
Electrochemistry
Nitrides
Microelectronics
Issue Date: Sep-2000
Publisher: American Institute of Physics
Abstract: Nitrogen doped silicon (NIDOS) films have been deposited by low-pressure chemical vapor deposition from silane SiH4 and ammonia NH3 at high temperature (750°C) and the influences of the NH3/SiH4 gas ratio on the films deposition rate, refractive index, stoichiometry, microstructure, electrical conductivity, and thermomechanical stress are studied. The chemical species derived from silylene SiH2 into the gaseous phase are shown to be responsible for the deposition of NIDOS and/or (silicon rich) silicon nitride. The competition between these two deposition phenomena leads finally to very high deposition rates (100 nm/min) for low NH3/SiH4 gas ratio (R¿0.1). Moreover, complex variations of NIDOS film properties are evidenced and related to the dual behavior of the nitrogen atom into silicon, either n-type substitutional impurity or insulative intersticial impurity, according to the Si¿N atomic bound. Finally, the use of NIDOS deposition for the realization of microelectromechanical systems is investigated.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1116/1.1286714
It is part of: Journal of Vacuum Science Technology A-Vacuum Surfaces and Films, 2000, vol. 18, p. 2389-2393
Related resource: http://dx.doi.org/10.1116/1.1286714
URI: http://hdl.handle.net/2445/25055
ISSN: 0734-2101
Appears in Collections:Articles publicats en revistes (Electrònica)

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