Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/28810
Title: Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
Author: Ibáñez i Insa, Jordi
Oliva Vidal, Robert
Mare, M. de la
Schmidbauer, M.
Hernández Márquez, Sergi
Pellegrino, Paolo
Scurr, D. J.
Cuscó i Cornet, Ramon
Artús i Surroca, Lluís
Shafi, M.
Mari, R. H.
Henini, M.
Zhuang, Q.
Godenir, A.
Krier, A.
Keywords: Propietats òptiques
Pel·lícules fines
Difracció de raigs X
Semiconductors
Cristal·lografia
Optical properties
Thin films
X-rays diffraction
Semiconductors
Crystallography
Issue Date: 2010
Publisher: American Institute of Physics
Abstract: We perform a structural and optical characterization of InAs1¿xNx epilayers grown by molecular beam epitaxy on InAs substrates x 2.2% . High-resolution x-ray diffraction HRXRD is used to obtain information about the crystal quality and the strain state of the samples and to determine the N content of the films. The composition of two of the samples investigated is also obtained with time-of-flight secondary ion mass spectroscopy ToF-SIMS measurements. The combined analysis of the HRXRD and ToF-SIMS data suggests that the lattice parameter of InAsN might significantly deviate from Vegard"s law. Raman scattering and far-infrared reflectivity measurements have been carried out to investigate the incorporation of N into the InAsN alloy. N-related local vibrational modes are detected in the samples with higher N content. The origin of the observed features is discussed. We study the compositional dependence of the room-temperature band gap energy of the InAsN alloy. For this purpose, photoluminescence and optical absorption measurements are presented. The results are analyzed in terms of the band-anticrossing BAC model. We find that the room-temperature coupling parameter for InAsN within the BAC model is CNM=2.0 0.1 eV.
Note: Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3509149
It is part of: Journal of Applied Physics, 2010, vol. 108, num. 1, p. 103504-1-103504-8
Related resource: http://dx.doi.org/10.1063/1.3509149
URI: http://hdl.handle.net/2445/28810
ISSN: 0021-8979
Appears in Collections:Articles publicats en revistes (Electrònica)

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