Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/28822
Full metadata record
DC FieldValueLanguage
dc.contributor.authorVilella Figueras, Eva-
dc.contributor.authorArbat Casas, Anna-
dc.contributor.authorComerma Montells, Albert-
dc.contributor.authorTrenado, J. (Juan)-
dc.contributor.authorAlonso Casanovas, Oscar-
dc.contributor.authorGascón Fora, David-
dc.contributor.authorVilà i Arbonès, Anna Maria-
dc.contributor.authorGarrido Beltrán, Lluís-
dc.contributor.authorDiéguez Barrientos, Àngel-
dc.date.accessioned2012-07-18T08:29:16Z-
dc.date.available2012-07-18T08:29:16Z-
dc.date.issued2010-
dc.identifier.issn0168-9002-
dc.identifier.urihttp://hdl.handle.net/2445/28822-
dc.description.abstractThe high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase of the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 µm and a high integration 0.13 µm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.-
dc.format.extent5 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.nima.2010.12.088-
dc.relation.ispartofNuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 2010, vol. 650, p. 120-124-
dc.relation.urihttp://dx.doi.org/10.1016/j.nima.2010.12.088-
dc.rights(c) Elsevier B.V., 2010-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationDetectors-
dc.subject.classificationMetall-òxid-semiconductors complementaris-
dc.subject.classificationFísica nuclear-
dc.subject.classificationElectrònica-
dc.subject.classificationCol·lisions (Física nuclear)-
dc.subject.otherDetectors-
dc.subject.otherComplementary metal oxide semiconductors-
dc.subject.otherNuclear physics-
dc.subject.otherElectronics-
dc.subject.otherCollisions (Nuclear physics)-
dc.titleReadout electronics for low dark count pixel detectors based on geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliderseng
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/acceptedVersion-
dc.identifier.idgrec584051-
dc.date.updated2012-07-18T08:29:16Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Files in This Item:
File Description SizeFormat 
584051.pdf1.14 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.