Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/29242
Title: Low dark count geiger mode avalanche photodiodes fabricated in conventional CMOS technologies
Author: Vilella Figueras, Eva
Arbat Casas, Anna
Alonso Casanovas, Oscar
Comerma Montells, Albert
Trenado, J. (Juan)
Vilà i Arbonès, Anna Maria
Casanova Mohr, Raimon
Garrido Beltrán, Lluís
Diéguez Barrientos, Àngel
Keywords: Fotònica
Metall-òxid-semiconductors complementaris
Sistemes d'imatges
Photonics
Complementary metal oxide semiconductors
Imaging systems
Issue Date: 2011
Publisher: American Scientific Publishers
Abstract: Avalanche photodiodes operated in the Geiger mode present very high intrinsic gain and fast time response, which make the sensor an ideal option for those applications in which detectors with high sensitivity and velocity are required. Moreover, they are compatible with conventional CMOS technologies, allowing sensor and front-end electronics integration within the pixel cell. Despite these excellent qualities, the photodiode suffers from high intrinsic noise, which degrades the performance of the detector and increases the memory area to store the total amount of information generated. In this work, a new front-end circuit that allows low reverse bias overvoltage sensor operation to reduce the noise in Geiger mode avalanche photodiode pixel detectors is presented. The proposed front-end circuit also enables to operate the sensor in the gated acquisition mode to further reduce the noise. Experimental characterization of the fabricated pixel with the conventional HV-AMS 0.35µm technology is also presented in this article.
Note: Versió postprint del document publicat a: http://dx.doi.org/10.1166/sl.2011.1814
It is part of: Sensor Letters, 2011, vol. 9, num. 6, p. 2408-2411
Related resource: http://dx.doi.org/10.1166/sl.2011.1814
URI: http://hdl.handle.net/2445/29242
ISSN: 1546-198X
Appears in Collections:Articles publicats en revistes (Electrònica)

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