Please use this identifier to cite or link to this item: http://hdl.handle.net/2445/29404
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dc.contributor.authorVilella Figueras, Eva-
dc.contributor.authorDiéguez Barrientos, Àngel-
dc.date.accessioned2012-08-31T10:09:18Z-
dc.date.available2012-08-31T10:09:18Z-
dc.date.issued2011-
dc.identifier.issn1748-0221-
dc.identifier.urihttp://hdl.handle.net/2445/29404-
dc.description.abstractThe need to move forward in the knowledge of the subatomic world has stimulated the development of new particle colliders. However, the objectives of the next generation of colliders sets unprecedented challenges to the detector performance. The purpose of this contribution is to present a bidimensional array based on avalanche photodiodes operated in the Geiger mode to track high energy particles in future linear colliders. The bidimensional array can function in a gated mode to reduce the probability to detect noise counts interfering with real events. Low reverse overvoltages are used to lessen the dark count rate. Experimental results demonstrate that the prototype fabricated with a standard HV-CMOS process presents an increased efficiency and avoids sensor blindness by applying the proposed techniques.-
dc.format.extent10 p.-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherInstitute of Physics-
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1088/1748-0221/6/12/C12005-
dc.relation.ispartofJournal Of Instrumentation, 2011, vol. 6, p. C12005-
dc.relation.urihttp://dx.doi.org/10.1088/1748-0221/6/12/C12005-
dc.rights(c) Institute of Physics, 2011-
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)-
dc.subject.classificationSoroll electrònic-
dc.subject.classificationMetall-òxid-semiconductors complementaris-
dc.subject.classificationCol·lisions (Física nuclear)-
dc.subject.otherElectronic noise-
dc.subject.otherComplementary metal oxide semiconductors-
dc.subject.otherCollisions (Nuclear physics)-
dc.titleAvoiding sensor blindness in Geiger mode avalanche photodiode arrays fabricated in a conventional CMOS process-
dc.typeinfo:eu-repo/semantics/article-
dc.typeinfo:eu-repo/semantics/acceptedVersion-
dc.identifier.idgrec600607-
dc.date.updated2012-08-31T10:09:19Z-
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess-
Appears in Collections:Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

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